The field of electronics engineering has witnessed continuous efforts to develop smaller and high-performing field effect transistors (FETs) with multiple functions over the past few decades. FETs play a critical role in controlling the electrical current in various electronic devices available in the market today. However, downsizing FETs to sizes below 10nm has proven to be a major challenge. In response to this, researchers have started exploring the potential of reconfigurable devices as alternatives to conventional FETs. While previous attempts primarily relied on silicon-based FETs, a team of researchers from Tsinghua University has recently introduced a breakthrough solution using a different semiconductor material called molybdenum ditelluride.
The new reconfigurable devices developed by the researchers at Tsinghua University have the ability to switch between multiple functions, serving as diodes, memories, logic gates, and even artificial synapses for neuromorphic computing hardware. One of the main advantages of these devices is that they are based on molybdenum ditelluride, a semiconductor material that overcomes several limitations associated with silicon-based counterparts. In their research paper published in Nature Electronics, the team explained that two-dimensional semiconductors, like molybdenum ditelluride, offer promising thinness and strong gate control, making them suitable for creating non-volatile reconfigurable devices. However, achieving varied reconfigurable functions with a simple device configuration has been a major challenge.
To address the challenge of creating varied reconfigurable functions, the researchers at Tsinghua University utilized an effective-gate-voltage-programmed graded-doping strategy. This approach enabled the creation of a single-gate two-dimensional molybdenum ditelluride device with multiple reconfigurable functions. The team extensively tested the device and compared its performance and capabilities with those of previous reconfigurable devices based on 2D materials. The findings were highly promising, indicating that the device’s reconfigurability is comparable, or in some cases, even greater than that of existing designs mentioned in past literature. Additionally, the device demonstrated remarkable results in all its different functions and showed potential for easier upscaling compared to silicon-based alternatives.
The molybdenum ditelluride-based device showcases exceptional features and capabilities in various applications. As a diode, it exhibits an impressive rectification ratio of up to 104. Moreover, it performs as an artificial hetero synapse, demonstrating heterosynaptic metaplasticity with a modulatory power consumption as low as 7.3 fW. These findings indicate the device’s potential to significantly improve the performance and efficiency of electronic devices.
The device introduced by the Tsinghua University researchers has opened up exciting possibilities for further advancements. The molybdenum ditelluride-based device can be further improved, integrated with other electronic components, and subjected to additional experiments to assess its capabilities. Furthermore, its innovative design has the potential to inspire the development of other reconfigurable and multi-functional devices, paving the way for new research avenues in electronic engineering.
The introduction of the molybdenum ditelluride-based reconfigurable device by the researchers at Tsinghua University marks a significant milestone in the field of electronics engineering. By addressing the limitations of silicon-based FETs and achieving multiple reconfigurable functions, this device opens up new possibilities for the advancement and integration of electronics. The impressive features and capabilities showcased by this device not only contribute to the enhancement of current electronic devices but also inspire future developments in the field. With continued research and exploration, reconfigurable devices hold the potential to revolutionize the electronics industry and shape a more advanced and interconnected world.